Reverse saturation current ________ for every 10°C rise in temperature.

Reverse saturation current

The current flowing in the diode during reverse bias conditions due which is caused by the diffusion of minority carriers from the neutral regions to the depletion region.

This current increases in the range of nanoamps (in silicon diode) or microamps (in germanium diode) with regard to reverse voltage in a reverse characteristic of PN-junction.

From the diode current equation:

\(I_d=I_o({e^{V_d\over \eta V_T}-1})\)

The current should decrease as the temperature is increased but the opposite happens.

This is because when the temperature is increased, more electron-hole pairs are generated and due to this the conductivity will increase, and thus current will also increase. 

Reverse saturation current doubles for every 10°C rise in temperature.