One-Sided Junction Capacitance and Depletion Width MCQ Quiz - Objective Question with Answer for One-Sided Junction Capacitance and Depletion Width - Download Free PDF

Last updated on Mar 22, 2025

Latest One-Sided Junction Capacitance and Depletion Width MCQ Objective Questions

Top One-Sided Junction Capacitance and Depletion Width MCQ Objective Questions

One-Sided Junction Capacitance and Depletion Width Question 1:

The depletion approximation in a p-n junction cannot be applied for which of the following?

  1. The electric field and space charge calculation.
  2. The space charge and diffusion current calculation.
  3. The electric field, space charge, and diffusion current calculation.
  4. The diffusion current calculation.

Answer (Detailed Solution Below)

Option 4 : The diffusion current calculation.

One-Sided Junction Capacitance and Depletion Width Question 1 Detailed Solution

Concept:

Depletion approximation: It is assumed that the depletion region is devoid of any mobile charge carriers. We assume that the carrier concentration (n and p) is negligible as compared to the doping concentration (Na and Nd) in the depletion/junction region. Outside this region, the net charge density is assumed to be zero.

F1 Shubham 23-9-2020 Swati D4

The depletion approximation simplifies the calculation of electric field, space charge region and electric potential.

But the approximation cannot be applied for diffusion current calculation.

Jp=q×Dp×dpdx

Jn=q×Dn×dndx

With the depletion approximation, the rate of change of charge carriers becomes infinity and hence the diffusion current becomes infinity.

∴ The depletion approximation will not be considered for the calculation of the diffusion current. 

One-Sided Junction Capacitance and Depletion Width Question 2:

In a p+n Si Junction having reverse bias voltage = 100 V, the n side has a donor concentration of 1016 cm-3. If ni = 1010 cm-3, relative dielectric constant εr = 12. Calculate the electric field at the mid-point of the depletion region on the n-side

Answer (Detailed Solution Below) -274464 - -274461

One-Sided Junction Capacitance and Depletion Width Question 2 Detailed Solution

Concept:-

For p+ - n diode, the value of NA is very large 1ND+1NA1ND

Write the expression for depletion width,

w=2ε0εrq(1ND+1NA)Vr

=2ε0εrq(1ND)Vr

Calculations:

Given that,

ε0 = 8.85 × 10-14 F/cm.

εr = 12

ND = 1016/ cm3

Vr = 100 V.

after substituting the value

w=2(8.85×1014(12)1.6×1019[11016](100)

w = 364.34 μm

Expression of electric field on n-side

E=qεXnoNd

Substitute W2 for Xno

E=qε0εr(W2)Nd

E=(1.6×1019)(8.85×1014)(12)[364.349×1062]1016

E = -274462.5 V/cm

One-Sided Junction Capacitance and Depletion Width Question 3:

A pnp transistor at room temperature (300°K) has base width of 2 μm. If the mobility of holes in the transistor is 800 cm2/v-s, then the maximum frequency at which the transistor can be properly used as switch is _______ MHz.

Answer (Detailed Solution Below) 160 - 170

One-Sided Junction Capacitance and Depletion Width Question 3 Detailed Solution

The cut-off frequency is dependent on transmit time of holes.

τt=Wb22Dp

Dp = μp VT = 800 × 0.0259 cm2/s

= 20.72 cm2/s

τt=(2×104)22×20.72=9.65×1010s

∴ Cut-off frequency fc=12πτt

=12π 9.65×1010

= 164 MHz

One-Sided Junction Capacitance and Depletion Width Question 4:

A silicon p+n junction at T=300K has ni=1.5×1010cm3. For the pn junction, a plot of 1/C2 v/s VR intercepts VR axis at 0.855V where C is junction capacitance per unit area and VR is reverse bias. The acceptor dopant concentration on p-side is Na=5.34×1018cm3. Assuming a one-side junction, the slope of the plot (in(F/cm2)2V1)    1/C2 v/s VR is.

Given, VT=0.0259 V and ϵs=11.7ϵo.

  1. 1.32×1015
  2. 2.64×1017
  3. 2.64×1015
  4. 5.28×1015

Answer (Detailed Solution Below)

Option 1 : 1.32×1015

One-Sided Junction Capacitance and Depletion Width Question 4 Detailed Solution

We have, junction capacitance given by, C={eϵsNaNd2(Vbi+VR)(Na+Nd)}12 

Now, since a one-sided junction is assumed and the pn junction is p+n. Thus, NaNd

C={eϵsNd2(Vbi+VR)}12

1C2=2(Vbi+VR)eϵsNd           _____1)

When, VR=Vbi1C2=0

Thus, Vbi is the intercept on VR axis.

Vbi=0.855VVbi=0.855V

Built in potential potential Vbi is given by

Vbi=Vtln(NaNdni2)Nd=ni2Nae(VbiVT)=(1.5×1010)2(5.34×1018)e(0.8550.0259)Nd=9.15×1015cm3

Now, slope of the plot from 1)

1C2=2VbieϵsNd+2eϵsNdVR

Comparing with y=c+mx

We see slope of curve, m=2eϵsNd

=2(1.6×1019)(11.7)(8.854×1014)(9.15×1015)m=1.32×1015(F/cm2)2V1.

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