For the silicon diode (assuming rf to be zero), the value of ID in figure is:

F1 Madhuri Engineering 19.12.2022 D19

This question was previously asked in
KVS TGT WET (Work Experience Teacher) 23 Dec 2018 Official Paper
View all KVS TGT Papers >
  1. 2 mA
  2. 1 mA
  3. 3.32 mA
  4. 4.9 mA

Answer (Detailed Solution Below)

Option 3 : 3.32 mA
Free
KVS TGT Mathematics Mini Mock Test
11.6 K Users
70 Questions 70 Marks 70 Mins

Detailed Solution

Download Solution PDF

Concept:

At forward bias condition → Diode should be replaced with a battery source of value equal to its barrier potential(for silicon 0.7 V)circuit and the equivalent forward resistance rf.

At reverse bias condition → Diode should be replaced with an open circuit.

Calculation:

In the given circuit arrangement the diode is in forward bias;

F1 Madhuri Engineering 19.12.2022 D20

Then;

ID = (8-0.7)/2.2 = 3.32 mA 

Latest KVS TGT Updates

Last updated on May 8, 2025

-> The KVS TGT Notiifcation 2025 will be released for 16661 vacancies.

-> The application dates will be announced along with the official notification.

-> Graduates with B.Ed or an equivalent qualification are eligible for this post.

-> Prepare with the KVS TGT Previous Year Papers here.

Get Free Access Now
Hot Links: teen patti master real cash teen patti 100 bonus teen patti gold new version