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A JFET has three terminals namely ______.

This question was previously asked in
RSMSSB JE Electrical/Mechanical 2020 Official Paper (Diploma): Held on 26 Dec 2020
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  1. Cathode, anode, grid
  2. Emitter, base, collector
  3. Source, gate, drain
  4. Emitter, gate, collector

Answer (Detailed Solution Below)

Option 3 : Source, gate, drain
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Detailed Solution

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The correct answer is 'option 3'

Solution:

  • The JFET is a long channel of semiconductor material, doped to contain an abundance of positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type).
  • Ohmic contacts at each end form the source (S) and the drain (D).
  • A p-n junction is formed on one or both sides of the channel, or surrounding it using a region with doping opposite to that of the channel, and biased using an ohmic gate contact (G).

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Q1.A MOSFET is also known as Insulated-Gate  ________.
Q2.Which of the following statement is correct for the JFET (Junction Gate Field-Effect Transistor)?
Q3.Which of the following is NOT a type of Field Effect Transistor?
Q4.The following figure shows the transfer characteristic curve of a JFET. Its equation of drain current ID is given by:
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Q7.The layout of NMOS involves a subset of the layers and features set out. For NMOS we require (A) N-diffusion (Green) (B) Implant (Yellow) (C) Polysilicon (Red) (D) N-diffusion (Blue) Choose the correct answer from the options given below:
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Q10.In the small signal circuit shown, the enhancement mode n-channel MOSFET is biased in saturation with a transconductance gm. A small signal low-frequency voltage vd injected at the supply terminal results in a small signal voltage fluctuation v0 at the output. If the channel length modulation of the MOSFET is ignored, the small signal gain v0/vd is given by _____

More Field Effect Transistors Questions

Q1.Transfer characteristics of power MOSFET, shows the variation of _________ as a function of _________.
Q2.The value of the forward current gain of the power transistor is approximately ____________.
Q3.A JFET has the following parameters: VGS(off) = -8 V: IDSS = 30 mA, and VGS = -4 V. The drain current will be: 
Q4.A MOSFET is also known as Insulated-Gate  ________.
Q5.Which of the following statement is correct for the JFET (Junction Gate Field-Effect Transistor)?
Q6.In a metal oxide semiconductor FET, the metal oxide layer acts as a/an _______.
Q7.For a D-MOSFET when biased at VGS = 0 V having IDSS =30 mA and VGS (off) = -6V, the drain current is equal to ______.
Q8.For a certain D-MOSFET, IDSS = 10 mA and VGS(off) = -8 V. Calculate ID at VGS = -4 V. 
Q9.FET is a device which has:
Q10.MOSFET can be used as a
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