Junction Potential MCQ Quiz in தமிழ் - Objective Question with Answer for Junction Potential - இலவச PDF ஐப் பதிவிறக்கவும்

Last updated on Apr 19, 2025

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Latest Junction Potential MCQ Objective Questions

Top Junction Potential MCQ Objective Questions

Junction Potential Question 1:

The Depletion region width (W) for a reverse biased abrupt p+n junction is 1 μm when the voltage across the depletion region width is 0.75. The depletion region width when the voltage across the depletion region is 3V is _______ μm

Answer (Detailed Solution Below) 2

Junction Potential Question 1 Detailed Solution

Concept:

The width of the depletion region for a reversed bias pn junction is given by:

W=[2ϵ(Vo+VR)q(Na+NdNaNd)]12

where Vo = Built-in voltage

VR = Applied Reverse biased voltage

|Vo + VR| = voltage across the depletion region.

W ∝ Vo+VR, for the same doping profile.

Calculation:

Given |Vo + VR|1 = 0.75

W1(Vo+VR)1, i.e.

W1 ∝ (0.75)½

1 μm ∝ (0.75)½    ---(1)

Similarly W2(Vo+VR)2

Given |Vo + VR|2 = 3 V

W2 ∝ (3)½      ---(2)

Dividing (2) by (1), we get:

W21=(30.75)12

W2 = (4)½ μm

W2 = (4)½ μm

W2 = 2 μm

Junction Potential Question 2:

Consider a pn junction at zero bias with an electric distribution as sketched below

If ϵs = 1.05 × 10-12 F/cm between, then the doping level n is 50 < x < 100 nm _____ × 1017/cm3

FT 7+AFT 2 file 2 images Q25

  1. 2.1
  2. 1.3
  3. -2.1
  4. -1.3

Answer (Detailed Solution Below)

Option 2 : 1.3

Junction Potential Question 2 Detailed Solution

Inside the depletion region

dEdx=ρϵs

ρ=ϵsdEdx=1.05×1012(Fcm)×105(N/cm)50×107cm

= -2.1 × 10-2 c/cm3

The doping level is then

ρ = -q Na

Na=ρq=2.1×102c/cm31.6×1019C

= 1.3 × 1017/cm3

Electric field is positive for x > 0 this is p-type region.

Junction Potential Question 3:

Consider a pn junction at zero bias with an electric distribution as sketched below. Calculate the built-in-potential

FT 7+AFT 2 file 2 images Q24

Answer (Detailed Solution Below) 0.75

Junction Potential Question 3 Detailed Solution

The electric field is related to the potential by:

E(x)=dVdx

The built-in potential is, therefore, the integral of the electric field at zero bais, i.e.

ϕB=105vcm[(50+100)107]×12

105×150×1072

⇒ 75 × 10-2 V

⇒ 0.75 V

Junction Potential Question 4:

An abrupt p-n junction under thermal equilibrium shows the electric field distribution with peak electric field at the junction of -15 × 104 V/m. The magnitude of the diffusion potential is _______ V.

EDC D5

Answer (Detailed Solution Below) 0.28 - 0.32

Junction Potential Question 4 Detailed Solution

E=¯.V

V=E.dx

= Area under E - x

=12(4×106)(15×104)

= 0.3 volts

Junction Potential Question 5:

Below figure shows the electric field profile of a reverse biased p-n junction. If the built in potential is 0.75 V and applied reverse bias is 5.25 V, then the magnitude of maximum electric field Em is ____ V/μm.

GATE EC Electroic Devices I Madhu images Q15

Answer (Detailed Solution Below) 2.2 - 2.5

Junction Potential Question 5 Detailed Solution

The potential across junction V=Edx

Em=2VW

=2(VO+Vr)W

=2(0.75+5.25)5μm

= 2.4 V/μm

Junction Potential Question 6:

A forward bias of 0.5 V is applied to a P-N junction with built in potential 0.7 V. If the electric field maximum value is 4 × 106 V/m at the centre of depletion region then the width of the depletion region is ________ μm

Answer (Detailed Solution Below) 0.1

Junction Potential Question 6 Detailed Solution

Given Vf = 0.5 V = Vbi 0.7 V

In depletion region electric field is maximum at centre, its value is

Emax=2Vjunctionw

Vjunction=VbiVf (Or Vbi + Vr; Vr is reverse voltage)

4×106=2(0.70.5)W

W=2×0.24×106

=0.1×106m

= 0.1 μm

Junction Potential Question 7:

The switching speed of p + n junction (having a heavily doped P region) depends primarily on 

  1.  The mobility of minority carriers in the p+ region
  2. The lifetime of minority carriers in the p+ region
  3. The mobility of majority carriers in the n region 
  4. The lifetime of majority carriers in the n region 

Answer (Detailed Solution Below)

Option 4 : The lifetime of majority carriers in the n region 

Junction Potential Question 7 Detailed Solution

The p+n diode has a heavily doped p- region.

Under forward bias, the electrons are injected from the n region to the p region and holes are injected form p region into the n region.

These injected carries become minority carriers in the other region and recombine with the majority carriers there and decay exponentially with distance

The switching speed of p+n (heavily doped p – region) junction depends on the lifetime (τ) of the majority carriers (i.e. electrons) in the n – region which is a lightly doped region.

Junction Potential Question 8:

A uniformly doped silicon (ni=1.5×1010cm3)bipolar transistor at T=300K with base doping NB=5×1016cm3 and collector doping NC=2×1015cm3. The metallurgical base width is 0.7μm. The rate of change of depletion width on base side xdB with respect to reverse biasVCB,dxdBdvcB at VCB=1.11V is:

  1. 1.2×108m/V
  2. 2.4×106cm/V
  3. 2.4×107m/V
  4. 6×108m/V

Answer (Detailed Solution Below)

Option 1 : 1.2×108m/V

Junction Potential Question 8 Detailed Solution

Depletion width on base side xdB is

xdB={2q(NcNB1(NB+NC))(Vbi+VCB)}12xdB={2×11.7×8.85×1014(1.6×1019)(2×10155×101615.2×1016)(Vbi+VR)}12xdB={(9.96×1012)(Vbi+VCB)}12

Built-in potential, Vbi=VTln(NBNCni2)

Vbi=(0.0259)ln(5×1016×2×1015(1.5×1010)2)Vbi=0.695V

Now, dxdBdVCB=3.156×1062Vbi+VCB

dxdBdvCB|VCB=1.11=3.156×10620.695+1.11dxdBdvCB|VCB=1.11=1.18×108m/V

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